Ka-band high efficiency power amplifier MMIC with 0.30μm MESFET for high volume applications |
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| Authors: | Mondal J. Geddes J. Carlson D. Vickberg M. Bounnak S. Anderson C. |
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| Affiliation: | SRC Honeywell, Bloomington, MN; |
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| Abstract: | A single-ended three-stage MESFET power amplifier designed for high-volume, low-cost applications shows an average of 15-21% power added efficiency in Ka-band with 100-150 mW of power output over 30-35 GHz. Δ<S21 with power saturation, an important parameter in phased array applications, is also reported. Efficiencies as high as 28% were measured on good wafers with high on-wafer repeatability under power drive |
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