Fabrication of 24-MHz-Disk Resonators With Silicon Passive Integration Technology |
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| Authors: | Sworowski M Neuilly F Legrand B Summanwar A Philippe P Buchaillot L |
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| Affiliation: | NXP Semicond., Innovation Center RF, Caen, France; |
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| Abstract: | A new approach for the fabrication of large contour-mode single-crystal silicon resonators has been demonstrated without the use of SOI substrates. Twenty-four-megahertz disk resonators have been built thanks to industrial facilities dedicated to the integration of passive components on silicon and exhibit a good compromise between the quality factor higher than 50 000 and the motional resistance of a few kiloohms. |
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