Si-defect concentrations in heavily Si-DOPED GaAs: annealing-Induced changes-II |
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Authors: | R T Chen W G Spitzer |
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Affiliation: | (1) Departments of Materials Science and Physics, University of Southern California, 90007 Los Angeles, California;(2) Present address: Microelectronics Research and Development Center, Rockwell International, 91360 Thousand Oaks, CA |
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Abstract: | Isothermal annealing produces changes in the free carrier density, defect-induced localized vibrational mode (LVM) infrared
absorption, microstructure as measured by transmission electron microscopy (TEM), and critical resolve shear stress of heavily
Si-doped GaAs. The changes have been measured and correlated for three different Si concentrations for several annealing temperatures.
The measurements reveal temperature dependent annealing-induced changes in several specific defect concentrations. The observations
indicate the following behavior for two ingots with Si] ≳ 2 × 1019 cm−13: (1) when the anneal temperature, TA = 400°C, the concentration of Siga donors, as determined from LVM spectra decreases probably due to the generation of VGa defects followed by the formation of SiGa-VGa pairs. This change is responsible for observed decreases in carrier density and the large increase in yield stress. The yield
stress shows a dependence of the form σ-σo ∝ SiGa-VGa]1/4. (2) When TA = 500°C, the LVM spectra indicate that all of the observed Si defect concentrations change. The decrease in SiGa] alone cannot explain the decrease in carrier density, and a previous suggestion that a new acceptor is required is confirmed.
Both the LVM measurements and the shear stress indicate that only a small fraction of the SiGa] reduction is by the formation of SiGa-VGa pairs. (3) When TA = 700°C, a new acceptor is still required and the other experimental observations at TA = 500°C are also still seen here. There is a large decrease in SiGa] and SiAs] observed for short anneal times which coincides with the formation of Si-rich extrinsic loops and the loop area/vol increases
with Si]. (4) When TA > 700°C, all of the changes become smaller as TA increases. For lower Si] ~ 1.5 × 1018 cm−3, no significant annealing-induced changes are observed for any of the TA given above. |
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Keywords: | GaAs:Si annealing effects physical properties infrared absorption microstructure yield stress |
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