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缺陷太阳电池EL图像及伏安特性分析
引用本文:肖娇,徐林,曹建明.缺陷太阳电池EL图像及伏安特性分析[J].现代科学仪器,2010(5):105-108.
作者姓名:肖娇  徐林  曹建明
作者单位:上海交通大学物理系太阳能研究所,上海,200240
摘    要:本文基于电致发光(Electroluminescence,EL)的理论,利用红外检测的方法,通过CCD近红外相机实验检测出了晶体硅太阳电池中存在的隐性缺陷,如隐裂、断栅、电阻不均匀、花片等,并将可见光下电池图像与EL图像进行对比。对存在缺陷的太阳电池进行了伏安特性测试,得出隐裂缺陷对太阳电池伏安特性、填充因子、效率等性能的影响,也证明电致发光技术检测太阳电池缺陷的准确性。

关 键 词:太阳电池  电致发光  电池缺陷  伏安特性

Electroluminescence Images and I-V Characteristic Analysis of Defective Crystalline Silicon Solar Cells
Xiao Jiao,Xu Lin,Cao Jianming.Electroluminescence Images and I-V Characteristic Analysis of Defective Crystalline Silicon Solar Cells[J].Modern Scientific Instruments,2010(5):105-108.
Authors:Xiao Jiao  Xu Lin  Cao Jianming
Affiliation:Xiao Jiao, Xu Lin, Cao Jianrning (Solar Energy Institute, Physics Dept, Shanghai JiaoTong University, Shanghai, 200240, China)
Abstract:Based on Electroluminescence (EL) theory, the micro-cracks of crystalline silicon solar cells were detected by the near-infrared CCD camera, such as the cracks, off-grid, non-uniform resistance, flower slice. Then we compared the EL images with the images under visible light. I-V characteristic of the defective solar cells was tested, and we got that the defects would affect the I-V curve, fill factor, efficiency of the solar cell, meanwhile EL technology is proved to be an accurate measurement to detect solar cells.
Keywords:Solar cell  Electroluminescence  Solar cell defects  I-V characteristic
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