碳纳米管场发射显示器特性测试方法的研讨

通过低压化学气相沉积法在硅片上制作碳纳米管薄膜阴极，用真空荧光显示器的封装工艺，制备了碳纳米管场发射显示器样管。改变常用的驱动电源电压测试为器件电压测试，得到非常理想的伏安特性曲线和发光特性曲线。从测试结果分析可知，直接测量碳纳米管场发射显示器的器件电压和测试电源驱动电压所得结果是不同的，用后者代替前者不够合理。从电子场发射的角度看，实际的碳纳米管场发射伏安特性曲线应比测试的伏安曲线更陡。

Survey on Measurement for Carbon Nanotubes-Field Emission Display

The carbon nanotubes cathode was prepared by chemical vapor deposition (CVD) method on silicon substrate , a field emission display of the carbon nanotubes cathode was fabricated by vacuum fluorescent display package processes. Both power supply voltage and device voltage were measured at the same time. Very ideal I-V characteristic and luminance-voltage characteristic of carbon nanotubes-field emission display (CNT- FED) are obtained for device voltage. There is a great difference between power supply voltage and device voltage, that substituting power supply voltage for device voltage is unreasonable and actual carbon nanotubes field emission I-V characteristic curve must be steeper than metrical I-V characteristic curve for electron field emission.