Photoluminescence studies of thermal impurity diffused porous silicon layers |
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Authors: | K B SUNDARAM S A ALI R E PEALE W A McCLINTIC JR |
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Affiliation: | (1) Department of Electrical and Computer Engineering, Orlando, FL 32816, USA;(2) Department of Physics, University of Central Florida, Orlando, FL 32816, USA |
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Abstract: | Porous silicon layers were formed on diffused layers. Both boron and phosphorus impurities were thermally diffused using solid
sources in n-Si, p-Si, n-epi/Si and p-epi/Si substrates of various resistivities. Porous silicon on these layers was formed
by electrochemical and chemical etching under various etching conditions. Strong visible luminescence was observed from these
porous silicon structures. Infrared absorption studies indicated that surface molecule identities are immaterial to the enhancement
or degradation of photoluminescence.
This revised version was published online in July 2006 with corrections to the Cover Date. |
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