Effect of the dielectric-substrate interface on charge accumulation from vacuum ultraviolet irradiation of low-<em>k</em> porous organosilicate dielectrics期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Effect of the dielectric-substrate interface on charge accumulation from vacuum ultraviolet irradiation of low-k porous organosilicate dielectrics

Authors:	H SinhaA Sehgal H RenMT Nichols M TomoyasuNM Russell Y NishiJL Shohet

Affiliation:	^a Plasma Processing & Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA ^b Tokyo Electron Limited, Albany, NY 12203, USA ^c Stanford University, Stanford, CA 94305, USA

Abstract:	We compare the effect of various dielectric-substrate interfaces on charge accumulation during vacuum ultraviolet irradiation of capped low-k porous organosilicates to find that more charges are trapped in a dielectric stack deposited on silicon compared with the same stack deposited on copper. Insertion of a 5-nm interfacial thermal oxide layer further increases the amount of trapped charges in the dielectric. The difference between the photoemission and injection currents determines the number of charges trapped in the dielectric as a result of irradiation. Fewer charges are trapped when the injection current increases.

Keywords:	Vacuum ultraviolet irradiation Low-k dielectrics Charge accumulation Dielectric-substrate interface
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