Molecular dynamics simulation of ion ranges in the 1–100 keV energy range

Binary collision approximation methods have been conventionally used to describe the slowing down of recoiling ions. In order to better understand the slowing-down process, molecular dynamics methods are more and more used in the literature. However, the computer capacity limits the usefulness of the methods in most practical cases where ion implantation in the 1–100 keV energy range is used. We present an efficient molecular dynamics method for calculating ion ranges and deposited energies in the recoil energy region 100 eV to 100 keV. By taking into account only the interactions that are involved in the slowing-down process, range and deposited energy distributions at higher energies can be simulated. The method is demonstrated by range calculations of 40 keV H atoms in Si, 40 keV He atoms in Ta and 100 eV to 10 keV Si atoms in Si.