Etching behavior of GaAs/AlGaAs multilayer structure during laser beam scanning |
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| Authors: | Se-Ki Park Cheon Lee Eun Kyu Kim |
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| Affiliation: | (1) Department of Electrical Engineering, Inha University, 402-751 Inchon, Korea;(2) Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, 130-650 Seoul, Korea |
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| Abstract: | The thermochemical etching behavior of GaAs/AlGaAs multilayer structure during laser beam scanning has been studied. The etch
rate changes between GaAs and AlGaAs epilayers as the etching process proceeds through the layered sample. The phenomenon
can be explained by the difference of thermal parameters of the heterojunction interface. The local temperature rise from
laser irradiation has been calculated to investigate etching characteristics for GaAs and AlGaAs. It is concluded that the
good thermal confinement at GaAs/AlGaAs interface produces the wider etch width of GaAs layer than that of AlGaAs layer in
GaAs/AlGaAs multilayer. The maximum etch rate of the GaAs/AlGaAs multilayer was 32.5 μm/sec and the maximum etched width ratio
of GaAs to AlGaAs was 1.7. |
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| Keywords: | Thermochemical etching GaAs/AlGaAs multilayer thermal confinement local temperature rise etched width ratio |
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