| P型GaMnAs／AlGaAs量子阱红外探测器研究 |
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| 引用本文： | 毕艳军,郭志友,于敏丽. P型GaMnAs／AlGaAs量子阱红外探测器研究[J]. 激光与红外, 2008, 38(8): 784-785 |
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| 作者姓名： | 毕艳军 郭志友 于敏丽 |
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| 作者单位： | 1. 华南师范大学信息光电子科技学院光电子材料与技术研究所,广东广州,510631
2. 河北省邢台职业技术学院电气工程系,河北邢台,054000 |
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| 基金项目： | 广东省科技厅科技计划，广东省广州市科技攻关项目 |
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| 摘 要： | 介绍了P型量子阱中空穴子带间跃迁原理,提出了一种基于铁磁性半导体的P型GaMnAs/AIGaAs量子阱红外探测器的设计方案,分析了器件的性能,对于新型量子阱红外探测器的研制提供一种可能的参考.
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| 关 键 词： | 自旋电子器件 子带间跃迁 GaMnAs/AlGaAs量子阱 红外探测器 |
Research of the P-type GaMnAs/AlGaAs Quantum Well Infrared Photoconductor |
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| BI Yan-jun,GUO Zhi-you,YU Min-li. Research of the P-type GaMnAs/AlGaAs Quantum Well Infrared Photoconductor[J]. Laser & Infrared, 2008, 38(8): 784-785 |
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| Authors: | BI Yan-jun GUO Zhi-you YU Min-li |
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| Affiliation: | Optoelectronic Material and Technology Institute,School for Information and Optoelctronic Science and Engineering,South China Normal University,Guangzhou 510631,China; Xingtai Polytechnic College,Xingtai 054000,China |
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| Abstract: | In this paper,an introduction to principle of intersubband transitions of holes in P-type quantum well,P-type GaMnAs/A1GaAs quantum well infrared photoconductor based on ferromagnetic semiconductors is proposed and performances of device are analyzed,provides a kind of possible reference for new quantum well infrared photoconductor. |
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| Keywords: | spin electric devices intersubband transitions GaMnAs/AlGaAs quantum well infrared photoconductor |
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