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Design and performance analysis of double cantilever type capacitive shunt RF MEMS switch |
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| Authors: | Girija Sravani K Srinivasa Rao K Prathyusha D Sai Kiran B V Siva Kumar B Prem Kumar R Santhi Tarun K |
| Affiliation: | 1.MEMS Research Center, Department of Electronics and Communication Engineering, Koneru Lakshmaiah Educational Foundation (Deemed to be University), Green Fields, Vaddeswaram, Guntur, 522502, India ;2.National MEMS Design Center, Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam, 788010, India ; |
| Abstract: | This paper presents a novel structure of capacitance shunt type RF switch for 5G applications. The proposed RF MEMS switch is having Cantilever type designed with optimized dimensions to operate in V-band applications. The electromechanical analysis is done by using the COMSOL tool. The actuation voltage of the proposed switch is 10.5 V with the air gap of 1 µm and gold as a beam material. The proposed switch with the meanders and perforations show the scattering parameters in HFSS software such as insertion loss (S12) of ??0.033 dB and return loss (S11) less than ??48 dB and the isolation (S21) calculated in off-state as ??62 dB at 50 GHz. |
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