| MOSFET模型参数的全域优化提取 |
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| 引用本文： | 郝跃,贾新章.MOSFET模型参数的全域优化提取[J].西安电子科技大学学报,1988(4). |
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| 作者姓名： | 郝跃 贾新章 |
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| 作者单位： | 西北电讯工程学院微电子研究所，西北电讯工程学院微电子研究所 |
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| 摘 要： | 本文采用最优化方法中的 L-M 方法,对 MOSFET 直流模型参数进行优化提取。采用了亚闽区、线性区和饱和区直流特性作为目标函数,并且考虑源漏串联电阻对 MOS 直流特性的影响。本文对 MOS 输出特性关于串联电阻的灵敏度分析,说明在线性区考虑它们的必要性。文章最后给出了实测结果与提取参数计算结果的比较。
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| 关 键 词： | MOS 场效应晶体管 模型 优化 提取 |
The optinal parameter extraction for MOSFET model in the whole region |
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| Hao Yue Jia Xinzhang.The optinal parameter extraction for MOSFET model in the whole region[J].Journal of Xidian University,1988(4). |
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| Authors: | Hao Yue Jia Xinzhang |
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| Affiliation: | Hao Yue Jia Xinzhang |
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| Abstract: | The parameters for the MOSFET DC model are extracted by the L-Malgorithm in the optimization method.The subthreshold,linear,and satu-ration regions of DC characteristics are used as an objective function andthe effects of series resistances in source and drain terminals on MOSFETDC characteristics are discussed.The saensitivities of the objective functionto the series resistances sate analysed and the necessity of discussingthem is discribed.Finally,comparsion of the results from the measurementsand the calculations is given. |
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| Keywords: | MOSFET model optimization extractions |
| 本文献已被 CNKI 等数据库收录！ |
