Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering |
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| Affiliation: | 1. Graduate School of Electrical and Electronics Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;2. Research Centre for Micro-Nano Technology, Hosei University, 3-11-15 Midori-cho, Koganei, Tokyo 184-0003, Japan;1. IHP, Im Technologiepark 25, Frankfurt (Oder), 15236 Germany;2. Dipartimento di Scienza dei Materiali, Università Milano-Bicocca, Via Cozzi 55, Milano, I-20125 Italy;3. Dipartimento di Scienze, Università degli Studi Roma Tre, Roma, I-00146 Italy;4. Dipartimento di Fisica ‘E Fermi’, Università di Pisa, largo Pontecorvo 3, Pisa, I56127 Italy;5. BTU Cottbus-Senftenberg, Konrad-Zuse Straße 1, Cottbus, 03046 Germany;6. Technische Universität Berlin, HFT4, Einsteinufer 25, Berlin, 10587 Germany;1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531 Japan;2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya, Tokyo, 158-0082 Japan;1. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan;2. Center for Crystal Science and Technology, University of Yamanashi, 7 Miyamae-cho, Kofu, Yamanashi 400-0021, Japan;1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;2. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;3. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan;4. Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;5. Center for Instrumental Analysis, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan;6. Center for Creative Technology, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan;1. ASM, America 3440 East University Drive, Phoenix, AZ 85034, USA;2. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA;3. ASM, Kapeldreef 75, 3001 Leuven, Belgium;4. imec vzw, Kapeldreef 75, 3001 Heverlee, Belgium;5. K.U. Leuven, Deartment of Physics, Celestijnenlaan 200D, 3001 Heverlee, Belgium |
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| Abstract: | We have demonstrated that sub-10 nm-thick heteroepitaxial Ge films on Si (001) having smooth surfaces can be obtained by DC magnetron sputtering. Ge films grown at 350 °C preserve the smooth surfaces with a roughness root mean square (RMS) of 0.39 nm, whereas, the Ge films grown at 500 °C show significant roughness with an island-like morphology. In samples grown at 350 °C, it is confirmed that the Ge films are grown epitaxially by cross-section transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements. Rapid thermal annealing (RTA) at 720 °C is effective in improving the crystalline quality and the degradation in the roughness is negligible. Raman spectra and an XRD reciprocal space map reveal that the epitaxial Ge grown at 350 °C show an in-plane compressive strain and that the strain continues to remain after a 720 °C RTA. |
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| Keywords: | Heteroepitaxial growth Germanium DC magnetron sputtering |
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