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Modeling of gate underlap junctionless double gate MOSFET as bio-sensor
Affiliation:1. Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi 110021, India;2. Department of Electronics, Sri Venkateswara College, University of Delhi, New Delhi 110021, India;3. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi 110078, India;1. Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-747, South Korea;2. Department of Electronics Engineering, Korea National University of Transportation, Chungju 380-702, South Korea;1. Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-747, South Korea;2. Department of Electronics Engineering, Korea National University of Transportation, Chungju 380-702, South Korea;1. Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi, 110021, India;2. Department of Electronics, Sri Venkateswara College, University of Delhi, New Delhi, 110021, India;3. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, 110078, India;1. Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, Rohini-22, New Delhi, India;2. Semiconductor Device Research Laboratory, Department of Electronics Science, University of Delhi South Campus, New Delhi 110021, India;3. Department of Instrumentation, Shaheed Rajguru College of Applied Science for Women, University of Delhi, New Delhi 110096, India;1. Department of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea;2. Department of Chemistry, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 156-756, Republic of Korea;3. Department of Chemical & Biomolecular Engineering, Department of Biological Sciences, Department of Bio & Brain Engineering, Bioinformatics Research Center, Center for Systems & Synthetic Biotechnology, and Institute for the BioCentury, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
Abstract:In this work, the sensitivity of two types gate underlap Junctionless Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (JL DG MOSFET) has been compared when the analytes bind in the underlap region. Gate underlap region considered at source end and drain end once at a time in the channel of JL DG MOSFET. Separate models have been derived for both types of gate underlap JL DG MOSFETs and verified through device simulation TCAD tool sprocess and sdevice. To detect the bio-molecules, Dielectric Modulation technique has been used. The shift in the threshold voltage has been pondered as the sensing parameter to detect the presence of biomolecules when they are bound in gate underlap channel region of the devices.
Keywords:Analytical model  Bio-sensor  Dielectric modulation  Junctionless MOSFET  TCAD
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