On the metallic bonding of GaN-based vertical light-emitting diode |
| |
Affiliation: | 1. School of Microelectronics, Shandong University, Jinan 250100, China;2. School of Physics, Shandong University, Jinan 250100, China;3. School of Science, Xi''an Polytechnic University, Xi''an 710048, China |
| |
Abstract: | In this work, metallic bonding in GaN-based vertical light-emitting diode (VLED) is systematically characterized by using combined methodology of transmission Kikuchi diffraction (TKD) and energy dispersive X-ray spectroscopy (EDS) in a scanning electron microscope (SEM). SEM-based TKD with EDS identifies chemical composition, grain morphology, orientation, and phases at metallic bonding, while transmission electron microscopy (TEM) provides nanoscale characteristics of metallic diffusion bonding, and its interface-related defects and nano-twinned boundaries. Our results from SEM-TKD and TEM techniques provide unparalleled insight into the metallic bonding, and its future optimization. |
| |
Keywords: | GaN Vertical light-emitting diode (VLED) Metallic bonding Transmission Kikuchi diffraction (TKD) |
本文献已被 ScienceDirect 等数据库收录! |
|