Ultraviolet-assisted annealing for low-temperature solution-processed p-type gallium tin oxide (GTO) transparent semiconductor thin films |
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| Affiliation: | 1. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024, China;2. College of Applied Science, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024, China;3. Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, China;1. Horticulture Postdoctoral Station, Anhui Agricultural University, Hefei 230036, China;2. Anhui Sanlian University, Hefei 230601, China;3. School of Science, Anhui Agricultural University, Hefei 230036, China;4. Department of Physics & Materials Science, University of Memphis, Memphis 38152, USA;1. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata 700009, India;2. Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Kolkata 700106, India;1. Institute of Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China;2. Department of Applied Physics, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China;3. Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA |
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| Abstract: | Solution-processed p-type gallium tin oxide (GTO) transparent semiconductor thin films were prepared at a low temperature of 300 °C using ultraviolet (UV)-assisted annealing instead of conventional high-temperature annealing (> 500 °C). We report the effects of UV irradiation time on the structural, optical, and electrical properties of sol-gel derived GTO thin films and a comparison study of the physical properties of UV-assisted annealed (UVA) and conventional thermally annealed (CTA) GTO thin films. The Ga doping content was fixed at 15 at% in the precursor solution ([Ga]/[Sn]+[Ga] = 15%). After a spin-coating and preheating procedure was performed two times, the dried sol-gel films were heated on a hotplate at 300 °C under UV light irradiation for 1–4 h. Each UVA GTO thin film had a dense microstructure and flat free surface and exhibited an average optical transmittance approaching 85.0%. The level of crystallinity, crystallite size, and hole concentration density of the GTO thin films increased with increasing UV irradiation time. In this study, the UVA 4 h thin film samples exhibited the highest hole concentration (9.87 × 1017 cm−3) and the lowest resistivity (1.8 Ω cm) and had a hole mobility of 5.1 cm2/Vs. |
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| Keywords: | P-type oxide semiconductor Gallium tin oxide Sol-gel spin coating UV light irradiation Electrical properties |
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