Photoluminescence of phosphorous doped Ge on Si (100) |
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| Affiliation: | 1. IHP, Im Technologiepark 25, Frankfurt (Oder), 15236 Germany;2. Dipartimento di Scienza dei Materiali, Università Milano-Bicocca, Via Cozzi 55, Milano, I-20125 Italy;3. Dipartimento di Scienze, Università degli Studi Roma Tre, Roma, I-00146 Italy;4. Dipartimento di Fisica ‘E Fermi’, Università di Pisa, largo Pontecorvo 3, Pisa, I56127 Italy;5. BTU Cottbus-Senftenberg, Konrad-Zuse Straße 1, Cottbus, 03046 Germany;6. Technische Universität Berlin, HFT4, Einsteinufer 25, Berlin, 10587 Germany;1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531 Japan;2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya, Tokyo, 158-0082 Japan;1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;2. The Research Fellow of Japan Society for the Promotion of Science, Chiyoda, Tokyo 102-0083, Japan;3. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan;1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;2. Department of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan;1. Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;2. Division for International Advanced Research and Education (DIARE), Tohoku University, 6-3, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan;3. Japan Society for the Promotion of Science Research Fellow for Young Scientists, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan;1. Graduate School of Engineering, Tokyo University of Agri. & Tech., Naka-cho 2-24-16, Koganei-shi, Tokyo 184-8588, Japan;2. Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan |
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| Abstract: | Photoluminescence (PL) of selectively grown phosphorus (P) doped germanium (Ge) is investigated. 350–600 nm thick P-doped Ge is grown on 100 nm thick P-doped Ge buffer layer, which is annealed at 800 °C before the main part of Ge deposition. In the case of Ge deposited at 325 °C, approximately two times higher PL intensity is observed by P doping of ~3.2×1019 cm−3. Further increase of PL intensity by a factor of 1.5 is observed by increasing the growth temperature from 325 °C to 400 °C due to improved crystal quality. Varying PH3 partial pressure at 400 °C, red shift of the PL occurred with increasing P concentration due to higher bandgap narrowing. With increasing P concentration up to ~1.4×1019 cm−3 at 400 °C the PL peak intensity increases by filling electrons into the L valley and decreases due to enhanced point defect concentration and degraded crystallinity. By post-annealing at 500–800 °C, the PL intensity is further increased by a factor of 2.5 because of increased active P concentration and improved crystal quality. Reduced direct bandgap energy by introducing tensile strain is also observed. |
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| Keywords: | Chemical vapor deposition Ge Phosphorus In-situ doping Photoluminescence |
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