High mobility and low operation voltage organic field effect transistors by using polymer-gel dielectric and molecular doping |
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| Affiliation: | 1. Optics Laboratory TUBİTAK UME, 41470 Gebze, Kocaeli, Turkey;2. Department of Physics, Muş Alparslan University, Muş, Turkey;3. Engineering Department, Fatih Sultan Mehmet Vakif University, 34080 Istanbul, Turkey;4. Deparment of Physics, Amasya University, 05000 Amasya, Turkey;5. Department of Physics, Yıldız Technical University, 34000 Davutpaşa, İstanbul, Turkey;1. Department of Electronic Engineering, Feng Chia University, 100, Wenhwa Road, Taichung, Taiwan 40724, Republic of China;2. Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1, University Road, Tainan, Taiwan 70101, Republic of China;1. Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China;2. Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China;3. Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi''an, 710072, China;1. Department of Solid State Physics, University of Mazandaran, 4741695447 Babolsar, Iran;2. Faculty of Chemistry, University of Mazandaran, Babolsar, Iran;1. Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, Republic of Korea;2. Department of Energy Engineering, School of Energy and Chemical Engineering, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea;1. School of Material Science & Engineering, Shanghai University, Shanghai 200444, People''s Republic of China;2. Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, People''s Republic of China;3. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People''s Republic of China;4. University of Chinese Academy of Sciences, Beijing 100049, People''s Republic of China;5. Faculty of Maritime and Transportation, Ningbo University, Ningbo 315211, Zhejiang, People''s Republic of China |
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| Abstract: | In this work, we present a method to increase the performance in solution processed organic field effect transistors (OFET) by using gel as dielectric and molecular doping to the active organic semiconductor. In order to compare the performance improvement, Poly (methylmethacrylate) (PMMA) and Poly (3-hexylthiophene-2,5-diyl) P3HT material system were used as a reference. Propylene carbonate (PC) is introduced into PMMA to form the gel for using as gate dielectric. The mobility increases from 5.72×10−3 to 0.26 cm2 V s–1 and operation voltage decreases from −60 to −0.8 with gel dielectric. Then, the molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) is introduced into P3HT via co-solution. The mobility increases up to 1.1 cm2 V s–1 and the threshold voltage downs to −0.09 V with doping. The increase in performance is discussed in terms of better charge inducing by high dielectric properties of gel and trap filling due to the increased carrier density in active semiconductor by molecular doping. |
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| Keywords: | Molecular doping Organic semiconductors OFET Gel dielectric |
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