DLTS characterization of defects in GaN induced by electron beam exposure |
| |
| Affiliation: | 1. Graduate School of Science and Engineering, Saitama University, 255 Shimo-Ohkubo, Sakura-ku, Saitama 338-8570, Japan;2. Mitsubishi Chemical Group, Science and Technical Research Center Inc., 1000 Kamoshida-cho, Aoba-ku, Yokohama 227-8502, Japan;1. National Center for Physics, Quaid-i-Azam University, Islamabad 44000, Pakistan;2. iThemba LABS, National Research Foundation, P. Bag X11 WITS 2050, South Africa;3. Physics Department, Allama Iqbal Open University, Islamabad, Pakistan;4. Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering & Applied Sciences (PIEAS), Islamabad 45650, Pakistan;5. Center for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad, Pakistan;6. School of Materials Science and Engineering, Shanghai University, Shanghai, China;7. School Chemistry & Physics, University of Kwazulu-Natal, Pietermaritzburg Campus, Private Bag X01, Scottsville 3209, South Africa;8. Department of Physics, Islamia College Peshawar (Public sector University), Pakistan;1. Institute of Polymeric Materials, Sahand University of Technology, Tabriz, Iran;2. Faculty of Polymer Engineering, Sahand University of Technology, Tabriz, Iran;1. Department of Physics, University of Isfahan, Hezar Jarib Street, Isfahan 81746-73441, Iran;2. Faculty of New Sciences and Technology, University of Isfahan, Hezar Jarib Street, Isfahan 81746-73441, Iran;1. Sapienza University of Rome, Dept. of Basic and Applied Sciences for Engineering, Via Antonio Scarpa 14, 00161 Roma, Italy;2. ENEA Casaccia Research Centre, Via Anguillarese 301, 00123 Roma, Italy;3. Sogin, Via Marsala 51c, 00185 Roma, Italy |
| |
| Abstract: | The deep level transient spectroscopy (DLTS) technique was used to investigate the effects of electron beam exposure (EBE) on n-GaN. A defect with activation energy of 0.12 eV and capture cross section of 8.0×10–16 cm2 was induced by the exposure. The defect was similar to defects induced by other irradiation techniques such as proton, electron, and gamma irradiation. In comparison to GaN, the EBE induced defects in other materials such as Si and SiC are similar to those induced by other irradiation methods. |
| |
| Keywords: | GaN DLTS Electron beam exposure Defect |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
