Influence of N2 introduction on structural and optical properties of V-doped ZnO thin films grown by low-temperature reactive RF magnetron sputtering |
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| Affiliation: | 1. Graduate School of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, Japan;2. Research Fellow of Japan of Society for the Promotion of Science, Koji-machi Business Center Building, 5-3-1 Koji-machi, Chiyoda-ku, Tokyo 102-0083, Japan;1. Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, Zürich CH-8093, Switzerland;2. Electron Microscopy Center Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland;3. Institute for Scientific Computing, Technische Universität Dresden, Willers-Bau B – Zellescher Weg 12-14, Dresden D-01062, Germany;4. CSEM, Rue Jaquet-Droz 1, CH-2002 Neuchâtel, Switzerland;5. Department of Condensed Matter Physics, Masaryk University, Kotlářská 2, CZ-61137 Brno, Czech Republic;6. CEITEC, Masaryk University, Kamenice 5, CZ-60177 Brno, Czech Republic;7. L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy;8. L-NESS and Department of Physics, Politecnico di Milano and IFN-CNR, Via Anzani 42, I-22100 Como, Italy;1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany;2. Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Rome, Italy;3. Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan;4. University of Technology Brandenburg, Konrad-Zuse-Straße 1, 03046 Cottbus, Germany;5. National Institute of Advanced Industrial Science and Technology(AIST) GaN Advanced Device Open Innovation Laboratory, Akasaki Institute 4F, Furo-cho, Nagoya, Aichi 464-8601, Japan;1. STMicroelectronics, 850 Rue Jean Monnet, 38920 Crolles, France;2. University Grenoble Alpes, F-38000 Grenoble, France;3. CNRS, LTM, MINATEC Campus, F-38054 Grenoble, France;4. CEA, INAC (SP2M/LEMMA), F-38000 Grenoble, France;5. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France;1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531 Japan;2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya, Tokyo, 158-0082 Japan;1. Graduate School of Electrical and Electronics Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;2. Research Centre for Micro-Nano Technology, Hosei University, 3-11-15 Midori-cho, Koganei, Tokyo 184-0003, Japan |
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| Abstract: | The influences of N2 introduction to a sputtering gas on structural and optical properties of vanadium-doped ZnO (VZO) films, grown by using reactive RF magnetron sputtering on a quartz substrate at room temperature, were investigated. In the VZO films, V doping caused to form a large number of O vacancies (VO) and degraded both the c-axis orientation and optical transmittance. While, on the contrary, the ZnO(002) diffraction intensity of 3.5-at.% VZO films increased adding N2 with a partial pressure ratio (αN2) >2% reaching a maximum at αN2 =5%. The average optical transmittance (wavelengths: 450−800 nm) of the 3.5-at.% VZO films was also improved by the N2 introduction and reached 74% at αN2 =5%. As a result of the analyses of the chemical binding states of the incorporated N atoms via the Raman spectroscopy and XPS, it was confirmed that the O sites were substituted by the N atoms and the amount of incorporated N increased by the high V doping. From the above, the N2 introduction was effective to suppress the VO formation even in room-temperature-grown VZO films, so it enables to improve both the c-axis orientation and optical transmittance. |
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| Keywords: | ZnO Vanadium Nitrogen Low-temperature growth RF magnetron sputtering |
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