Displacement current of Au/p-diamond Schottky contacts |
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| Affiliation: | 1. Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;2. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531 Japan;2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya, Tokyo, 158-0082 Japan;1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;2. Department of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan;1. Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi, 980-8579 Japan;2. Division for International Advanced Research and Education (DIARE), Tohoku University, 6-3, Aza-Aoba, Aramai, Aoba-ku, Sendai, Miyagi, 980-8578 Japan;3. Japan Society for the Promotion of Science Research Fellow for Young Scientists, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo, 102-0083 Japan |
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| Abstract: | In this study, the displacement current of Au/p-diamond Schottky contacts was studied by comparing them with low-Mg-doped p-GaN Schottky contacts. In the current–voltage (I–V) characteristics, the current was proportional to the voltage sweep speed at V >−1.5 V. The differential output waveform was obtained through AC operation. Therefore, the displacement current was dominant in the low voltage region where in the true current was extremely small due to the large Schottky barrier height of 1.57 eV. The memory effect, due to the charge and discharge of localized acceptor-type deep-level defects, was negligible in the I–V curve. A clear AC differential signal was confirmed. This suggested that the interface defect density of the p-diamond contacts was very small compared to the p-GaN contacts. Hence, p-diamond Schottky contacts were expected to be a good candidate for a key device such as a phase modulator in a wireless transmitter. |
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| Keywords: | p‐diamond p‐GaN Schottky contact AC operation |
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