Effect of Bi doping on the properties of CdSe thin films for optoelectronic device applications |
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| Affiliation: | 1. Thin Film Laboratory, Department of Physics, National Institute of Technology, Karnataka, Surathkal, Mangalore 575025, India;2. Department of physics, NMAM Institute of Technology, Nitte 574110, Karnataka, India;1. “Ilie Murgulescu” Institute of Physical Chemistry, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest, Romania;2. Department of Mathematics and Fundamental Sciences, Maritime University, 104 Mircea cel Batran, 900663 Constanta, Romania;1. State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. School of Engineering, University of Warwick, Coventry CV4 7AL, UK;3. Semiconductor Business Unit, Zhuzhou CRRC Times Electric Co.,Ltd., Zhuzhou 412001, China;1. Thin Film Laboratory, Department of Physics, National Institute of Technology, Karnataka, Surathkal, Mangalore 575025, India;2. Department of Physics, NMAM Institute of Technology, Nitte 574110, Karnataka, India;1. Holography and Materials Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra, India;2. Department of Biological and Environmental Science, College of Life Science and Biotechnology, Dongguk University-Seoul, Jung-gu, Seoul 100-715, Republic of Korea;3. Department of Environmental Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu 702-701, Republic of Korea;4. Radiation & Photochemistry Division, BARC, Mumbai 400085, India;1. Thin Film Laboratory, Department of Physics, National Institute of Technology, Karnataka, Surathkal, Mangalore 575025, India;2. Department of Physics, NMAM Institute of Technology Nitte, 574110, India;1. Functional Nanomaterials & Devices Lab, Centre for Nanotechnology & Advanced Biomaterials and School of Electrical & Electronics Engineering, SASTRA University, Thanjavur-613 401, India;2. School of Electrical & Electronics Engineering, SASTRAUniversity, Thanjavur-613 401, India |
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| Abstract: | CdSe and Bi (1%, 2%, 3%) doped CdSe thin films were deposited on the glass substrates using thermal evaporation technique. Effect of Bi doping on the structural, optical, electrical and photo response properties of CdSe thin films were investigated. The X-ray diffraction studies reveals that undoped and Bi doped CdSe films are polycrystalline in nature with hexagonal crystal structure along (002) direction. No significant changes are observed in the lattice parameters or the grain size indicating minimum lattice distortion. The optical band gap of undoped CdSe film was estimated to be 1.67 eV. Replacement of cadmium by bismuth results in an increase in the electrical conductivity of doped films. Doping with bismuth is found to improve the photo sensitivity of CdSe thin films. |
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| Keywords: | Cadmium selenide Bismuth doping Electrical conductivity Thermal evaporation |
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