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Structural phase-dependent resistivity of intrinsic-extrinsic co-doped transparent titanium dioxide films
Affiliation:1. Abdul Wali Khan University, Department of Physics, 23200 Mardan, Pakistan;2. Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, Trento, Italy;3. University of Trento, Department of Physics, Via Sommarive 15, 38123 Povo, Trento, Italy;4. Department of Physics, Balochistan University of Information Technology, Engineering & Management Science (BUITEMS), Quetta, Pakistan;1. Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan;2. Center for Creative Technology, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan;3. Center for Instrumental Analysis, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan;4. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;1. Sobolev Institute of Geology and Mineralogy, Siberian Branch of Russian Academy of Sciences, 3 Acad. Koptyug Avenue, 630090 Novosibirsk, Russia;2. Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, 3 Acad. Lavrentiev Avenue, 630090 Novosibirsk, Russia;3. Novosibirsk State University, 2 Pirogova Str., 630090 Novosibirsk, Russia;4. South Ural State University, 76 Lenin Avenue, 454080 Chelyabinsk, Russia;5. Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, Akademgorodok Str. 50/38, 660036 Krasnoyarsk, Russia;6. Far Eastern State Transport University, 47 Serysheva Str., 680021 Khabarovsk, Russia;7. Siberian Federal University, 79 Svobodny Ave., 660041 Krasnoyarsk, Russia;1. Department of Materials Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran;2. Department of Material Science and Engineering, Sharif University of Technology, Tehran, Iran;3. Department of Biomaterial Engineering, Islamic Azad University, Yazd Branch, Iran;1. Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Priv. Xochicalco S/N, 62580, Temixco, Morelos, Mexico;2. Centro de Investigación en Ingeniería y Ciencias Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, 62209 Cuernavaca, Morelos, Mexico;1. Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, 38108 Braunschweig, Germany;2. Technische Universität Berlin, Department of High-Frequency and Semiconductor System Technologies, 10587 Berlin, Germany
Abstract:The authors report a method of enhancing the conductivity of TiO2 films by controlling their structural phases. Thin films of Nb:TiO2 (TNO) were prepared on glass and silicon substrates by RF sputtering with varying Nb content at 200 °C. It is shown that fine control over the structural phases of TiO2 is critical for achieving low resistivity. The resistivity values of the films doped with oxygen vacancies and Nb+5 decreased from 3.8 × 10?1 to 4.1 × 10?3 Ω cm when the weight percent of rutile in anatase-rutile phase mixture decreases from 52.8% to 32%. Furthermore, the lowest resistivity value of 2.37 × 10?3 Ω cm was obtained for the doped TiO2 films having single phase anatase structure. The physical processes responsible for the diverse electrical properties are discussed and are associated with the growth conditions. Our result indicates that highly conductive doped-TiO2 film can be obtained by controlling the anatase phase formation via the growth temperature. The obtained results can significantly contribute to the development of transparent electrodes by RF sputtering, a suitable technique for coating large area substrates.
Keywords:Transparent conducting oxides  RF sputtering  Structure properties  Electrical properties  Optical properties
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