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A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production
Affiliation:1. OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;2. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany;3. BTU Cottbus-Senftenberg, Institute of Physics and Chemistry, Konrad-Zuse-Str. 1, 03046 Cottbus, Germany;1. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;2. Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;1. Horticulture Postdoctoral Station, Anhui Agricultural University, Hefei 230036, China;2. Anhui Sanlian University, Hefei 230601, China;3. School of Science, Anhui Agricultural University, Hefei 230036, China;4. Department of Physics & Materials Science, University of Memphis, Memphis 38152, USA;1. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024, China;2. College of Applied Science, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024, China;3. Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, China;1. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata 700009, India;2. Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Kolkata 700106, India
Abstract:
Keywords:Vacuum epitaxial lift-off (VELO)  InGaAlP TF-LED  Reuse GaAs  AlAs etching  HRXRD
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