Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer |
| |
| Affiliation: | 1. Department of Applied Physics, Indian Institute of Technology (ISM), Dhanbad 826004, India;2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India;1. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, Jilin, PR China;2. State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023, PR China;1. Institute of Photovoltaics, Nanchang University, Nanchang 330031, China;2. School of Science, Nanchang Institute of Technology, Nanchang 330099, China;3. School of Science, Nanchang University, Nanchang 330031, China;1. School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People''s Republic of China;2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People''s Republic of China;1. Thin Film & Solar Studies Research Laboratory, Solapur University, Solapur 413255, M.S., India;2. Electrotechnical Institute, Division of Electrotechnology & Materials Science, ul. M Skłodowskiej-Curie 55/61, 50-369 Wroclaw, Poland;3. Division of Physics & Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea;4. N.K. Orchid College of Engineering & Technology, Solapur 413002, M.S., India;5. Polymer Chemistry Department, Solapur University, Solapur 413255, M.S., India |
| |
| Abstract: | The current-voltage (I-V) characteristics of Au/n-GaP Schottky barrier diode was analyzed in wide temperature range of 220–400 K. The conduction mechanism in the low bias region, except for 220 K and 240 K, was identified as tunneling (TN). Nevertheless, thermionic emission (TE) becomes dominant as the voltage increases. The diode parameters were evaluated in this region by TE model incorporating the concept of thin insulating layer. The series resistance (Rs) of the device was found to decrease with increase in temperature. In the 220–320 K temperature range, as reported for most of the Schottky diodes, the zero-bias barrier height (ϕb0) decreases and the ideality factor (η) increases with the decrease of temperature. The value of modified Richardson constant (A**) obtained agrees well with the theoretical value. However, in the 320–400 K range, the variation of η and ϕb0 with temperature shows opposite trend, which is speculated as due to the change in conduction pattern by the temperature induced modifications at the interface. |
| |
| Keywords: | Au/GaP Schottky contacts Transport properties Barrier inhomogeneity Conduction mechanisms |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
