Development of highly conducting n-type micro-crystalline silicon oxide thin film and its application in high efficiency amorphous silicon solar cell |
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| Affiliation: | 1. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, South Korea;2. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, South Korea;1. Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science & Technology, Shibpur, Howrah-711103, India;2. National Institute of Solar Energy, Gwalpahari, Gurgaon 122003, Haryana, India;1. Department of Electronic Engineering, Feng Chia University, 100, Wenhwa Road, Taichung, Taiwan 40724, Republic of China;2. Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1, University Road, Tainan, Taiwan 70101, Republic of China;1. Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huai’an 223003, People''s Republic of China;2. Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin 150080, People''s Republic of China;3. Jiangsu Provincial Key Laboratory of Palygorskite Science and Applied Technology, Huaiyin Institute of Technology, Huai’an 223003, People''s Republic of China |
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| Abstract: | Wide band gap and highly conducting n-type nano-crystalline silicon film can have multiple roles in thin film solar cell. We prepared phosphorus doped micro-crystalline silicon oxide films (n-μc-SiO:H) of varying crystalline volume fraction (Xc) and applied some of the selected films in device fabrication, so that it plays the roles of n-layer and back reflector in p-i-n type solar cells. It is generally understood that a higher hydrogen dilution is needed to prepare micro-crystalline silicon, but in case of the n-μc-SiO:H an optimized hydrogen dilution was found suitable for higher Xc. Observed Xc of these films mostly decreased with increased plasma power (for pressure<2.0 Torr), increased gas pressure, flow rate of oxygen source gas and flow rates of PH3>0.08 sccm. In order to determine deposition conditions for optimized opto-electronic and structural characteristics of the n-μc-SiO:H film, the gas flow rates, plasma power, deposition pressure and substrate temperature were varied. In these films, the Xc, dark conductivity (σd) and activation energy (Ea) remained within the range of 0–50%, 3.5×10?10 S/cm to 9.1 S/cm and 0.71 eV to 0.02 eV, respectively. Low power (30 W) and optimized flow rates of H2 (500 sccm), CO2 (5 sccm), PH3 (0.08 sccm) showed the best properties of the n-μc-SiO:H layers and an improved performance of a solar cell. The photovoltaic parameters of one of the cells were as follows, open circuit voltage (Voc), short circuit current density (Jsc), fill-factor (FF), and photovoltaic conversion efficiency (η) were 950 mV, 15 mA/cm2, 64.5% and 9.2% respectively. |
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| Keywords: | N-type micro-crystalline silicon oxide Amorphous silicon solar cell Back reflector Device efficiency |
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