Synthesis method and substrate influence on TiO2 films doped with low vanadium content |
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| Affiliation: | 1. “Ilie Murgulescu” Institute of Physical Chemistry, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest, Romania;2. Department of Mathematics and Fundamental Sciences, Maritime University, 104 Mircea cel Batran, 900663 Constanta, Romania;1. Tallinn University of Technology, Department of Materials and Environmental Technologies, Ehitajate tee 5, 19086 Tallinn, Estonia;2. NEXT ENERGY - EWE Research Centre for Energy Technology at the University of Oldenburg, Carl-von-Ossietzky-Straβe 15, 26129 Oldenburg, Germany;3. Laboratory of NanoMaterials, Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, Nobel str., Building 3, 143026 Moscow, Russia;4. Department of Applied Physics, Aalto University, School of Science, P.O. Box 15100, FI-00076 Espoo, Finland;5. National University of Science and Technology “MISIS”, Leninsky Ave, 4, Moscow 119049, Russia;1. Department of Physics, Middle East Technical University, 06800 Ankara, Turkey;2. Virtual International Scientific Research Centre, Baku State University, 1148 Baku, Azerbaijan;1. Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Instituto de Ciência e Tecnologia, Diamantina/MG, CEP 39100‐000, Brasil;2. Universidade Federal de São Carlos (UFSCar), Departamento de Química, Rod. Washington Luiz, km 235, CEP 13565-905 São Carlos/SP, Brasil;3. EMBRAPA Instrumentação, Rua XV de Novembro, 1452, CEP 13560-970, CP 741, São Carlos/SP, Brasil;4. Universidade Federal de São Carlos (UFSCar), Departamento de Física, Rod. Washington Luiz, km 235, CEP 13565-905 São Carlos/SP, Brasil;5. Instituto de Física de São Carlos, Universidade de São Paulo, Avenida Trabalhador São-carlense, 400, 13566-590 São Carlos/SP, Brasil;1. Laboratory of Materials Science, Faculty of Chemistry, (USTHB), BP 32 16111 Algiers, Algeria;2. Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry, (USTHB), BP 32 16111 Algiers, Algeria |
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| Abstract: | Titania films doped with low amount of vanadium were deposited on different substrates (microscope glass, microscope glass covered with SiO2 barrier layer, and silicon wafer with a thermally grown layer of SiO2) by dip coating from solutions prepared by sol-gel and microwave (MW) assisted sol-gel syntheses. The selected molar composition was 99.95:0.05 which corresponds to 0.03 at% of V. The films were characterized by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), X-ray diffraction (XRD) and Spectroscopic Ellipsometry (SE). The deposited films thermally treated at 450 °C, presented homogeneous and continuous nanostructured surfaces and good adherence to the substrates used. All samples crystallized in anatase phase and have good optical properties. The highest transmission value was obtained for the V-doped TiO2 films (T > 90%) deposited from solutions prepared by microwaves assisted sol-gel method. Based on the obtained results it was concluded that the method of preparation has higher influence on the properties of the resulted films than the substrates used. |
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| Keywords: | V doping Sol-gel method MW assisted sol-gel method Different substrates |
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