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Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates
Affiliation:1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;2. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;3. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan;4. Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;5. Center for Instrumental Analysis, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan;6. Center for Creative Technology, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan;1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531 Japan;2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya, Tokyo, 158-0082 Japan;1. Graduate School of Engineering, Tokyo University of Agri. & Tech., Naka-cho 2-24-16, Koganei-shi, Tokyo 184-8588, Japan;2. Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;1. Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan;2. Center for Creative Technology, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan;3. Center for Instrumental Analysis, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan;4. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;2. The Research Fellow of Japan Society for the Promotion of Science, Chiyoda, Tokyo 102-0083, Japan;3. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan;1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;2. Department of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan;1. Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi, 980-8579 Japan;2. Division for International Advanced Research and Education (DIARE), Tohoku University, 6-3, Aza-Aoba, Aramai, Aoba-ku, Sendai, Miyagi, 980-8578 Japan;3. Japan Society for the Promotion of Science Research Fellow for Young Scientists, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo, 102-0083 Japan
Abstract:Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructure formed with the defect control by Ar ion implantation was investigated. It was found that compressive strain is sustained up to 900 °C without prominent change in surface roughness. From the X-ray diffraction reciprocal space mapping, it was found that relaxed Si1-xCx layer is stable up to at least 800 °C, and compressively strained Si1-xCx with relatively large thickness is formed by annealing at temperatures higher than 900 °C owing to redistribution of C atoms. These results indicate that the compressively strained Si/relaxed Si1-xCx heterostructure formed by Ar ion implantation technique is available up to at least 800 °C and has a potential to be used at more than 900 °C.
Keywords:Molecular beam epitaxy  Strained Si  Ion implantation  Thermal stability
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