Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer |
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| Affiliation: | 1. School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;2. Institute of Nano Optoelectronic Research and Technology (INOR), Universiti Sains Malaysia, 11800 Penang, Malaysia;1. School of Electrical and Computer Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, South Korea;2. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 156-756, South Korea;1. Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur 50603, Malaysia;2. Physics Department, Jazan University, Jazan, Saudi Arabia;3. NANO-ElecTronic Centre (NET), School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia;4. Department of Physics, Faculty of Science, Universiti Putra Malaysia, Serdang 43400, Malaysia;5. Department of Chemistry, Faculty of Applied Science, Umm Al-Qura University, Makkah, Saudi Arabia;6. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia;7. Mechanical Engineering Department, College of Engineering and Islamic Architecture, Umm Al-Qura University, Makkah, Saudi Arabia |
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| Abstract: | This work reports the growth of c-plane textured InN thin films on Cu-ZnO buffered silicon, c-sapphire, bulk GaN and quartz substrates. A Cu-ZnO buffer layer was deposited on all the substrates before the growth of InN film. A highly c textured film was obtained on sapphire and quartz substrates. Structural properties were calculated using XRD and Raman analysis. It was observed that, induction of Cu-ZnO buffer layer reduced the lattice mismatch between Si/GaN substrates and InN film. The bandgap of the films was obtained using UV visible reflectance spectroscopy. Hall measurements show high mobility films in the range of 119–223 cm2/Vs and an electron concentration of 1019. These results are in good agreement with previous results but are first time recorded using RF magnetron sputtering. Surface topography of the films showed smooth surfaces, which are due to reduced lattice mismatch between film and the substrate. |
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| Keywords: | InN film RF sputtering Cu-ZnO buffer layer High mobility III-V nitrides |
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