GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations |
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| Affiliation: | 1. Department of Physics Engineering, Hacettepe University, Beytepe, 06800 Ankara, Turkey;2. Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara, Turkey;3. Anton-Paar GmbH, Anton-Paar-Strasse 20, 8054 Graz, Austria;1. Laboratoire d′énergie et matériaux, Ecole Supérieur des Sciences et de Technologie, Rue Lamine Abassi, 4011 H.Sousse, Tunisia;2. Laboratoire de micro-optoélectronique et Nanostructures, Faculté des Sciences de Monastir, Bd Environnement, 5019 Monastir, Tunisia;3. Physics Department, College of Science, King Khalid University, Al-Greigar Abha, Saudi Arabia;1. Horticulture Postdoctoral Station, Anhui Agricultural University, Hefei 230036, China;2. Anhui Sanlian University, Hefei 230601, China;3. School of Science, Anhui Agricultural University, Hefei 230036, China;4. Department of Physics & Materials Science, University of Memphis, Memphis 38152, USA;1. Belarusian State University, F. Skorina Ave. 4, 220030 Minsk, Belarus;2. Friedrich-Schiller University Jena, Max-Wien-Platz 1, D-07743 Jena, Germany;3. Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Dubna 141980, Russia;4. Institute of Nuclear Physics, National Nuclear Center, Almaty 050032, Kazakhstan;1. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024, China;2. College of Applied Science, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024, China;3. Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, China;1. Department of Physics, University of Maryland, College Park, MD 20742-4111, USA;2. Condensed Matter Theory Center, University of Maryland, College Park, MD 20742-4111, USA;3. Rice Quantum Institute, Rice University, Houston, TX 77005, USA;4. Departamento de Física, Universidad del Valle, A.A. 25360, Cali, Colombia |
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| Abstract: | Ge nanoparticles embedded in ZnO thin films (synthesized on p-type Si substrates) were investigated to explore their potential usage possibilities as diodes for opto-electronic devices and photovoltaics, thin-film transistors, and solar cells. Nano scale structural details under the effect of different gas pressure of O2 may include some hints to understand and develop structure-property correlations of the focused type materials. With this purpose, GISAXS (Grazing-incidence small-angle X–ray scattering) was used for 3D structural analysis of the films according to the thermal process (Rapid Thermal Annealing: RTA and Absence of Thermal Effect: AS-MADE) and O2 partial pressure during the deposition of ZnO matrix.As a result of the study, it may be said that size and shape controlled growth processes are possible for these types of films. Especially, increase in pressure indicates orthogonal like prismatic morphology at 1 mTorr, cylindrical at 3 mTorr and more compact spherical formation at 5 mTorr. That way, morphology controlled nanoscale growth can be achieved by changing the oxygen partial pressure for the oxide matrices. On the other hand, size of the nano aggregations decreases with increased partial pressure for both of RTA processed and AS-MADE samples. Decreasing ratio in the size of AS-MADE sample is bigger than that of RTA samples. |
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| Keywords: | GISAXS Nanostructured thin films Oxygen pressure Rapid thermal annealing |
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