Fabrication,temperature dependent current-voltage characteristics and photoresponse properties of Au/α-PbO2/p-Si/Al heterojunction photodiode |
| |
| Affiliation: | 1. Department of Physics, Faculty of Applied Medical Science, Taif University, Turabah 21995, Saudi Arabia;2. Department of Physics, Damietta Cancer Institute, 34517 Damietta, Egypt;3. Department of Physics, Faculty of education, Ain Shams University, Cairo 11757, Egypt;4. Department of Computer Engineering and Systems, Faculty of Engineering, Mansoura University, 35516 Egypt;1. Department of Physics, Science and Art Faculty, Batman University, Batman, Turkey;2. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey;3. Department of Energy Systems Engineering, Faculty of Engineering, Giresun University, Giresun, Turkey;4. Department of Physics, Faculty of Science, Selçuk University, Konya, Turkey;1. Department of Electric and Energy, Çölemerik V.H.S., Hakkari University, 30000, Hakkari, Turkey;2. Department of Electric and Energy, Ardahan Technical Sciences V.H.S., Ardahan University, 75000, Ardahan, Turkey;3. Department of Biotechnology, Faculty of Sience, Necmettin Erbakan University, 42060, Konya, Turkey;4. Department of Biology, Faculty of Science, Atatürk University, 25240, Erzurum, Turkey;5. Department of Physics, Faculty of Science, Atatürk University, 25240, Erzurum, Turkey;1. Namık Kemal University, Faculty of Arts and Sciences, Department of Physics, Değirmenaltı 59030, Turkey;2. Istanbul Technical University, Department of Metallurgical and Materials Engineering, Maslak 34469, Turkey |
| |
| Abstract: | Thin film of lead dioxide, α-PbO2, has been grown by thermal evaporation technique on the single crystal of p-Si substrate and heterojunction photodiode, Au/α-PbO2/p-Si/Al, was fabricated. The current-voltage characteristics of the diode have been studied in the temperature ranged from 303 to 373 K and the voltage applied during measurements varied from −1 to 1.5 V. It was found from the (I-V) characteristics of the diode that the conduction mechanisms in the forward bias direction are controlled by the thermionic emission at bias potential ≤0.7 V followed by single trap space charge limited current (SCLC) conduction in the voltage range >0.7 V. The capacitance-voltage characteristics of the device were studied at room temperature in dark condition and it has been shown that the diode is abrupt junction. The carrier concentration on both sides of the depletion layer has been determined. Energy band diagram for α-PbO2/p-Si device was constructed. The device under illumination with light of intensity 20 W/m2 gives acceptable values of photoresponse parameters such as photosensitivity and photoconductivity. The presented photodiode parameters exhibit the typical photosensor applications with reproducibility phenomenon. |
| |
| Keywords: | Photodiode Electric mechanisms Photoresponse properties |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
