Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures |
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| Affiliation: | 1. A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia;2. Novosibirsk State University, Novosibirsk 630090, Russia;3. Novosibirsk State Technical University, Novosibirsk 630055, Russia;1. Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany;2. SENTECH Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin, Germany;3. Laboratory of Nano and Quantum Engineering, Leibniz Universität Hannover, Schneiderberg 39, 30167 Hannover, Germany;1. Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, FL 32611, USA;2. Department of Aerospace Engineering, Iowa State University, Ames, IA 50011, USA;3. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA;4. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA;1. Material Science Group, Indira Gandhi Centre for Atomic Research, HBNI, Kalpakkam 603102, India;2. Synchrotrons Utilization Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, India;3. Homi Bhabha National Institute, Anushakti Nagar, Mumbai 400094, India;4. CBCMT, VIT University, Vellore 632014, India |
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| Abstract: | The strain relaxation during the Ge growth on Si(100) occurs vikia surface diffusion and Si-Ge intermixing at temperatures below 800 °C. The Ge diffusion into the Si substrate is an additional process at higher temperatures. We found that, if its rate is higher than the Ge deposition rate, the island formation is not realized. We determined the critical Ge deposition rate as a function of the temperature in the range of 840–960 °C, at which the dynamic equilibrium between the growth of islands and their decay through the diffusion takes place. The islands grown in the conditions close to the dynamic equilibrium are ordered with a distance between them of about 1 µm and they form a smoothed surface morphology. These are indicative of the surface layer strain uniformity. The islands have a SiGe composition which, in the direction parallel to the sample surface, is more uniform in comparison with the islands grown at lower temperatures. The results show that the use of high temperatures essentially improves the conditions for the heterostructure self-organization. |
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| Keywords: | Ge MBE on Si(100) High-temperature growth Self-organization Strain relaxation Dynamic equilibrium |
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