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Influence of in-situ SiNx mask on the quality of N-polar GaN films
Affiliation:1. Division of Advanced Materials Engineering & Research Center of Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756, Republic of Korea;2. Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea;3. School of Nano Engineering, Inje University, Gimhae 621-749, Republic of Korea;4. Department of Polymer-Nano Science and Technology, and Polymer Materials Fusion Research Centre, Chonbuk National University, Jeonju 561-756, Republic of Korea;1. Laboratory of Clean Energy Chemistry and Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China;2. University of Chinese Academy of Sciences, Beijing 100080, PR China;3. State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China;4. Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, PR China;5. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;1. School of Physics, Shandong University, Jinan 250100, China;2. School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China;3. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;4. Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China;1. Department of Electrical Engineering, National Taiwan Ocean University, No. 2, Peining Rd., Keelung 20224, Taiwan;2. Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA;3. Lab. of Green Energy & Environment Research, Industrial Tech Research Institute, Hsinchu1, Taiwan;4. Department of Surgery, Chang Gung Memorial Hospital, Keelung 20400, Taiwan;1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695, USA;2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
Abstract:
Keywords:GaN  N polar  MOCVD
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