Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies |
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| Affiliation: | 1. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China;2. Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China;1. Université Tunis El Manar, Faculté des Sciences de Tunis, Département de Physique, LR99ES13 Laboratoire de Physique de la Matière Condensée (LPMC), 2092 Tunis, Tunisia;2. King Khalid University, College of Science, Department of Physics, P.O. Box 9004, Abha 61413, Saudi Arabia;3. Institut d′Electronique et des systèmes, Unité Mixte de Recherche 5214 UM2-CNRS (ST2i) - Université Montpellier, 860 rue de Saint Priest, Bâtiment 5, 34097 Montpellier, France;1. Escuela Superior de Física y Matemáticas-Instituto Politécnico Nacional (IPN), C.P. 07738, CDMX, Mexico;2. Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Temixco, Morelos 62580, Mexico;3. Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs-Barcelona, Spain;4. Centro de Investigaciones en Ingeniería y Ciencias Aplicadas, Universidad Autónoma del Estado de Morelos, Morelos, C.P.62209, Mexico;5. CICATA–IPN, Altamira, Km. 14.5 carretera Tampico-puerto Altamira, Altamira, Tamaulipas, C.P. 89600, Mexico;1. School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China;2. School of Materials New Energy, Ningxia University, Ningxia, 750021, China |
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| Abstract: | A multicrystalline silicon ingot with columnar and irregular grains was obtained from metallurgical-grade silicon (MG-Si) by directional solidification. The segregation behaviors of substitutional and interstitial impurities in different grain morphologies have been studied. The concentration distribution of substitutional impurities (B and Al) in the silicon ingot was accord with the Scheil's equation, which depended on the grain morphology. However, the concentration distribution of interstitial impurities (Fe, Ti, Cu, and Ni) was only accord with the Scheil's equation under the columnar grains growth condition. The difference lattice sites of the impurities will result in the disparate segregation behavior of impurities for columnar and irregular grains growth, which leads to the diverse concentration distribution of substitutional and interstitial impurities in the silicon ingot. Furthermore, the transport mechanism of interstitial and substitutional impurities in front of the solid-liquid interface boundary has been revealed. |
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| Keywords: | Directional solidification Grain morphology Interstitial impurity Substitutional impurity |
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