Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method |
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| Affiliation: | 1. STMicroelectronics, 850 Rue Jean Monnet, 38920 Crolles, France;2. University Grenoble Alpes, F-38000 Grenoble, France;3. CNRS, LTM, MINATEC Campus, F-38054 Grenoble, France;4. CEA, INAC (SP2M/LEMMA), F-38000 Grenoble, France;5. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France;1. Graduate School of Electrical and Electronics Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;2. Research Centre for Micro-Nano Technology, Hosei University, 3-11-15 Midori-cho, Koganei, Tokyo 184-0003, Japan;1. Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, Zürich CH-8093, Switzerland;2. Electron Microscopy Center Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland;3. Institute for Scientific Computing, Technische Universität Dresden, Willers-Bau B – Zellescher Weg 12-14, Dresden D-01062, Germany;4. CSEM, Rue Jaquet-Droz 1, CH-2002 Neuchâtel, Switzerland;5. Department of Condensed Matter Physics, Masaryk University, Kotlá?ská 2, CZ-61137 Brno, Czech Republic;6. CEITEC, Masaryk University, Kamenice 5, CZ-60177 Brno, Czech Republic;7. L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy;8. L-NESS and Department of Physics, Politecnico di Milano and IFN-CNR, Via Anzani 42, I-22100 Como, Italy;1. Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;2. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531 Japan;2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya, Tokyo, 158-0082 Japan;1. Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;2. Division for International Advanced Research and Education (DIARE), Tohoku University, 6-3, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan;3. Japan Society for the Promotion of Science Research Fellow for Young Scientists, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan |
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| Abstract: | We have developed a highly-sensitive transient photocapacitance measurement (TPM) system for deep defects in wide bandgap materials, and applied it to characterize the boron-doped diamond films grown on a high-pressure/high-temperature-synthesized Ib diamond substrate using high-power-density microwave-plasma chemical vapor deposition method. The developed TPM system has both a low detection limit of less than 0.5 fF for changes in the photocapacitance and a low measurement temperature drift of less than 0.03 K in 12 h. By using the TPM system, we have successfully found an acceptor-type defect around 1.2 eV above the valence-band maximum for the B-doped diamond film with a considerably high crystalline quality that had some strong exciton emission peaks in the cathodoluminescence spectra taken at ≈80 K. The photoionization cross section and the defect density estimated for the observed defect were 3.1×10–15 cm2 and 2.8×1016 cm?3, respectively. |
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| Keywords: | Diamond film Homoepitaxy Photocapacitance Deep defect |
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