Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating |
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| Affiliation: | 1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531 Japan;2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya, Tokyo, 158-0082 Japan;1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;2. The Research Fellow of Japan Society for the Promotion of Science, Chiyoda, Tokyo 102-0083, Japan;3. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan;1. Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;2. Division for International Advanced Research and Education (DIARE), Tohoku University, 6-3, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan;3. Japan Society for the Promotion of Science Research Fellow for Young Scientists, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan;1. Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;2. Reserch Fellow of Japan Society for the Promotion of Science for Young Scientists, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo, 102-0083, Japan;1. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;2. TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa 252-1123, Japan |
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| Abstract: | By using our low-energy Ar plasma enhanced chemical vapor deposition (CVD) at a substrate temperature below 100 °C during plasma exposure without substrate heating, modulation of valence band structures and infrared photoluminescence can be observed by change of strain in a Si/strained Si0.4Ge0.6/Si(100) heterostructure. For the strained Si0.5Ge0.5 film, Hall mobility at room temperature was confirmed to be as high as 660 cm2 V?1 s?1 with a carrier concentration of 1.3×1018 cm?3 for n-type carrier, although the carrier origin was unclear. Moreover, good rectifying characteristics were obtained for a p+Si/nSi0.5Ge0.5 heterojunction diode. This indicates that the strained Si-Ge alloy and Si films and their heterostructures epitaxially grown by our low-energy Ar plasma enhanced CVD without substrate heating can be applicable effectively for various semiconductor devices utilizing high carrier mobility, built-in potential by doping and band engineering. |
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| Keywords: | Plasma chemical vapor deposition Heteroepitaxial growth Silicon Silicon-germanium alloy Valence band pn junction diode |
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