Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy |
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| Affiliation: | 1. IHP, Im technologiepark 25, 15236 Frankfurt (Oder), Germany;2. Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma, Italy;3. Technische Universität Dresden, Institut für Wissenschaftliches Rechnen, 01069 Dresden, Germany;4. INFM and l-NESS, Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy;5. BTU Cottbus-Senftenberg, Konrad-Zuse Straße 1, 03046 Cottbus, Germany;6. Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin, Germany;1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531 Japan;2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya, Tokyo, 158-0082 Japan;1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;2. The Research Fellow of Japan Society for the Promotion of Science, Chiyoda, Tokyo 102-0083, Japan;3. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan;1. Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;2. Division for International Advanced Research and Education (DIARE), Tohoku University, 6-3, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan;3. Japan Society for the Promotion of Science Research Fellow for Young Scientists, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan;1. Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan, ROC;2. Sino-American Silicon Productions Inc., Hsin-chu, Taiwan, ROC |
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| Abstract: | Our recent experimental results of Ge nanoheteroepitaxy (NHE) on Si nanopillars (NPs) are reviewed to confirm the possibility of relaxed Ge growth on Si without misfit dislocations (MDs) formation by elastic deformation. Selective Ge growth is performed by using reduced pressure chemical vapor deposition (CVD) on two types of Si NPs with thermal SiO2 or CVD SiO2 sidewalls and on Si nanoislands (NIs) on SiO2. By using thermal SiO2 sidewall, compressive strain is generated in the Si pillar and fixed by the thermal SiO2. This results in an incoherent Ge growth on Si NPs due to MD formation. By using CVD SiO2 sidewall, tensile strain formation due to thermal expansion during prebake for Ge epi process is observed. However, strain in Si due to Ge growth is not dominant. By introducing a Si0.5Ge0.5 buffer layer, no MD and stacking faults are observed by cross section TEM. The shape of Ge on Si NPs becomes more uniform due to improved crystal quality. On Si NIs on SiO2, a clear compliance effect is observed after Ge growth. Coherent growth of Ge on Si is also realized on Si NIs by using Si0.5Ge0.5 buffer. |
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| Keywords: | Selective Ge epitaxy Heteroepitaxial growth Coherent growth Strain Relaxation |
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