Electrical,photovoltaic and photosensitivity characteristics of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for photodiode applications |
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| Affiliation: | 1. Advaned Functional Materials & Optoelectronic laboratory (AFMOL), Physics Department, Faculty of Science, King Khalid University, Abha, Saudi Arabia;2. Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;3. Department of Physics, Faculty of Science & Arts, Aljouf University, Guryat, Saudi Arabia;4. Department of Physics, Faculty of Science, King AbdulAziz University, Jeddah 21589, Saudi Arabia;5. Center of Nanotechnology, King AbdulAziz University, Jeddah 21589, Saudi Arabia;6. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow, 32/46, 02-668 Warsaw, Poland;1. Institute of Physics of NASU, Prospect Nauky 46, Kyiv 03028, Ukraine;2. Excillum AB, Torshamnsgatan 35, 164 40 Kista, Sweden;3. Taras Shevchenko National University of Kyiv, 64 Volodymyrs''ka Str., 01601 Kyiv, Ukraine;4. Lviv National University, 8 Kyrylo and Mefodiy Str., 29005 Lviv, Ukraine;1. Physics Department, Faculty of Science, Alexandria University, Alexandria, Egypt;2. Physics Department,Faculty of Science and Arts, Aljouf University, Aljouf, Saudi Arabia;3. Thin Film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Heliopolis, Roxy, Cairo 11757, Egypt;4. Physics Department, College of Science, Al Imam Mohammad Ibn Saud Islamic University, IMSIU, Riyadh, Saudi Arabia;5. Electronic Materials Department, Advanced Technology and New Material Institute, City for Scientific Research and Technology Applications, New Borg El Arab City 21934, Alexandria, Egypt;1. Solid State Physics Department, Physics Division, National Research Center, Dokki, Cairo 12311, Egypt;2. Physics Department, Faculty of Science, Fayoum University, Fayoum, Egypt;3. Chemistry Department, Faculty of Science, Fayom University, Fayoum, Egypt;4. Research Scholar, Physics Department, Faculty of Science, Fayoum University, Egypt;5. Department of Physics, Faculty of Science and Arts, Aljouf University, Aljouf, Saudi Arabia;6. Thin Film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy 11757 Cairo, Egypt;1. Composites and Nano-Structured Department, Advanced Technology and New Material Institutes, City for Scientific Research and Technological Applications, New Borg El Arab City, Alexandria, Egypt;2. Solid State Physics Department, Physical Research Division, National Research Centre, 33 El-Bohouth St., Dokki, Giza 12622, Egypt;3. Electronic Materials Department, Advanced Technology, and New Material Institutes, City for Scientific Research and Technological Applications, New Borg El Arab City, Alexandria, Egypt;4. Physics Department, Faculty of Science and Arts, Aljouf University, Saudi Arabia;5. Thin Film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Heliopolis, Roxy, Cairo 11757, Egypt;6. Biophysics Department, Faculty of Science, Cairo University, Giza, Egypt |
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| Abstract: | In this work, heterojunctions of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for photovoltaic and photodiode application were grown epitaxially by using molecular beam system. Current-voltage profile of the heterojunction device was studied in dark and under various illumination intensities. The obtained photocurrent is found to depend on the light intensity. The main heterojunction parameters, such as shunt and series resistances, the barrier height and the ideality factor were extracted from the current-voltage profile using diverse methods at ambient temperature. Values of the barrier height and the series resistance were obtained from Cheung's functions. A large value of the series resistance causes the non-ideal characteristics of current–voltage measurements. The study of the current-voltage characteristics of high voltage region suggests a predominant space charge limited mechanism. Moderate values of short circuit current and open circuit voltage were obtained through a light intensity of 140 mW/cm2, a current and voltages of 0.336 mA and 370 mV, respectively. The high photosensitivity and responsivity for the current under illumination condition suggests that the prepared heterojunction device could be employed as a photodiode sensor. |
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| Keywords: | MBE Current-voltage Photodiode Light sensors Photovoltaic parameters |
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