Formation of Zn- and O- vacancy clusters in ZnO through deuterium annealing |
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Affiliation: | 1. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;2. K.U. Leuven, Arenbergpark 10, B-3001 Leuven, Belgium;1. Process Development Team 1, DB HiTek, Chungcheongbuk-do 27605, Republic of Korea;2. Department of Nanoengineering, University of Seoul, Seoul 02504, Republic of Korea;3. Process Control Systems and Application Group, Hitachi High-Technologies Korea Co., Ltd., Seoul 03188, Republic of Korea;4. Department of Physics, University of Seoul, Seoul 02504, Republic of Korea |
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Abstract: | Open volume defects, clearly distinguishable from the isolated Zn-vacancy are observed in hydrothermally grown ZnO after exposure to deuterium gas at elevated temperatures. From a combination of secondary ion mass spectrometry (SIMS), positron annihilation spectroscopy (PAS) and density functional theory (DFT) calculations it is found that as a result of this treatment vacancy clusters consisting of minimum one Zn- and one O-vacancy are formed, in contrast to introduction of isolated O-vacancies. A scenario for the cluster formation is proposed, where Zn- and O-vacancies originate from the bulk of the sample and the sample surface, respectively. A fraction of the vacancy clusters are decorated by Li and/or H and may therefore be indirectly observed by SIMS. The peak in Li-concentration at about 100 nm below the sample surface, as observed by SIMS is in good correspondence with the PAS-results. |
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Keywords: | ZnO Defects Vacancy clusters Secondary ion mass spectrometry Positron annihilation spectroscopy |
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