含FET的双晶体管结构微分负阻单口器件

本文实现了微分负阻单口实现定理从仅含双极型晶体管到包含场效应管的重要过渡。文中给出了两个方法,借以可系统地生成仅含两个晶体管及若干线性正电阻的具有S型或N型v—i特性的微分负阻单口器件。这里,两个晶体管可以是双极型的(HT),结型(JFET)或MOS型(MOSFET)场效应晶体管,或是它们的任意组合。由于不含内电源,这类电路可以方便地集成封装。文中列举了作者用SPICE程序模拟生成的大量这类电路,可供读者选用。

FET NDR One-Port Devices in 2-Transistor Configuration

The realization theorem of negative differential resistance(NDR)one-port is extended from including bipolar transistors only to allo-wing JFET＇s and MOSFET＇s. Two algorithms are given for systema- tically generating a NDR one-port which exhibits either a type-S or atype-N v-i characteristic. Those circits are made of 2 transistors and linear positive resistors only. The 2 transistors may be bipolar(n-P-n or p-n-p), JFET(n-channel or p-channel), MOSFET(n-chan-nel), or p-channel), or their combinations. Since the circuis do not require an internal power supply, they are passive and can be integ-rated as a two-terminal device in monolithic form. Hundreds of new and potentially useful NDR one-port have been discovered. A selectd catalog of many such prototype NDR one-port devices is presented for future applications.