溶胶-凝胶法制备PZT薄膜晶化过程的跟踪监测

用溶胶－凝胶技术制备了组成在准同型相界点［ｍ（Ｚｒ）／ｍ（Ｔｉ）＝５２／４８］附近的钙钛矿相ＰＺＴ薄膜，并运用原子力显微分析与椭偏法测试相结合的方法跟踪了薄膜的烧结过程．结果表明：钙钛矿相ＰＺＴ［ｍ（Ｚｒ）／ｍ（Ｔｉ）＝５２／４８］薄膜晶化发生于约５５０℃，并伴随着薄膜表面的粗糙化；镀铂硅基片表面粗糙度对ＰＺＴ薄膜的晶化有很大影响．根据ＡＦＭ，ＸＲＤ测试结果，分析了不同热处理条件对ＰＺＴ薄膜微结构及漏电流特性的影响，提出合适的热处理条件．分析了ＰＺＴ薄膜钙钛矿相形成温度高于相应粉体的原因

MONITORING OF THE CRYSTALLIZATION PROCESS OF SOL-GEL DERIVED PZT THIN FILMS

PZT thin films with a composition near the morphotropic phase boundary were prepared by the sol_gel process, and atomic force microscopy and spectroscopic ellipsometry were utilized to trace the sintering processes. The results show that crystallization of the perovskite phase begins at about 550 for PZT thin films associated with occurrence of surface roughness, and the surface roughness of platinum coated silicon substrate has great effect on the crystallization of PZT films. The effect of heat treatment conditions upon the microstructure and also correspondent leakage current properties of PZT thin films are analyzed based on AFM and XRD results, and appropriate heat treatment technology is proposed. The nucleation temperature of perovskite phase for PZT thin film is higher than that for PZT powder, and the cause is discussed.