Intermediate temperature oxidation in silicon nitride yttria ceramics

Silicon nitride billets with both 4% and 8% Y₂O₃ additives have been subjected to oxidation treatments for up to 300 h, in air, in the temperature range 700 to 1000° C. Flexure strength and weight gain measurements together with both scanning and transmission electron microscopy and X-ray diffraction studies were conducted on these billets in an effort to understand the oxidation process. It appears that the degradation phenomena is associated with both the formation of phases outside the Si₃N₄-Si₂ON₂-Y₂Si₂O₇ compatibility triangle of the system Si₃N₄-SiO₂-Y₂O₃ and with the decomposition of W-containing phases at and near the grain boundaries.