| 双掺硅单晶基本物理特性的研究 |
| |
| 引用本文： | 徐稼迟,桂德成,林金庭.双掺硅单晶基本物理特性的研究[J].固体电子学研究与进展,1985(1). |
| |
| 作者姓名： | 徐稼迟 桂德成 林金庭 |
| |
| 作者单位： | 南京固体器件研究所
(徐稼迟，桂德成)，南京固体器件研究所(林金庭) |
| |
| 摘 要： | 按一定掺杂比例制备了一种双掺硅单晶.单晶片经热处理后形成的P-N结具有结深浅、均匀、杂质浓度分布不同于扩散结和离子注入结等特点.本文研究了这种双掺硅单晶的基本物理特性;测量了各种电学参数和进行了位错等晶体缺陷的金相观察,并将这种材料与单掺杂硅单晶的某些电学性质进行了比较.
|
Research of Basic Physical Properties for Dual-Dopant Silicon Crystal |
| |
| Abstract: | Dual-dopant silicon crystal is prepared according to a certain doping ratio. P-N junction obtained from Dual-dopant silicon wafer after heat treatment features shallow junction depth, uniformity, impurity concentration profile different from those of diffusion and ion implantion. This paper describes the basic physical properties of the dual-dopant silicon crystal, measurements on its electrical parameters and metallographical observations of dislocation, etc. A comparison of electrical properties of the dual-dopant silicon crystal with single-dopant silicon crystal is also given. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
|
