An ultra-high pressure sensor based on SOI piezoresistive material |
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Authors: | Yulong Zhao Xudong Fang Zhuangde Jiang Libo Zhao |
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Affiliation: | (1) Micromachined Products Division, Analog Devices, Inc., 21 Osborn Street, 02139 Cambridge, MA, USA |
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Abstract: | This paper describes an ultra-high pressure sensor which is in urgent need and widely used in defense industry and petroleum
industry. It is designed on the combination of micro Silicon on Insulator (SOI) solid piezoresistive chip based on Micro Electro
Mechanical Systems (MEMS) technique and cylindrical elastic body that could successfully convert dynamic ultra-high pressure
measurement in explosion to strain measurement. Performances of the sensor including size, sensitivity, and linearity are
investigated with experiment data. It’s proved that the dynamic ultra-high sensor in the range of 2GPa in this paper is successful
in pressure measurement in explosion. The research of ultra-high pressure sensor in this paper could not only provide a reference
for the improvement of explosive property, but also lay a foundation for research of pressure sensor in the range of 10GPa
of the next step. |
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Keywords: | |
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