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An ultra-high pressure sensor based on SOI piezoresistive material
Authors:Yulong Zhao  Xudong Fang  Zhuangde Jiang  Libo Zhao
Affiliation:(1) Micromachined Products Division, Analog Devices, Inc., 21 Osborn Street, 02139 Cambridge, MA, USA
Abstract:This paper describes an ultra-high pressure sensor which is in urgent need and widely used in defense industry and petroleum industry. It is designed on the combination of micro Silicon on Insulator (SOI) solid piezoresistive chip based on Micro Electro Mechanical Systems (MEMS) technique and cylindrical elastic body that could successfully convert dynamic ultra-high pressure measurement in explosion to strain measurement. Performances of the sensor including size, sensitivity, and linearity are investigated with experiment data. It’s proved that the dynamic ultra-high sensor in the range of 2GPa in this paper is successful in pressure measurement in explosion. The research of ultra-high pressure sensor in this paper could not only provide a reference for the improvement of explosive property, but also lay a foundation for research of pressure sensor in the range of 10GPa of the next step.
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