Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration |
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Authors: | Kensuke Nishioka Tatsuya Takamoto Takaaki Agui Minoru Kaneiwa Yukiharu Uraoka Takashi Fuyuki |
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Affiliation: | a Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan;b SHARP Corporation, 282-1 Hajikami, Shinjo-cho, Kitakatsuragi-gun, Nara 639-2198, Japan |
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Abstract: | Temperature characteristics of the open-circuit voltage (Voc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of Voc of the InGaP/InGaAs/Ge triple-junction solar cell (dVoc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition. |
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Keywords: | Multi-junction solar cell Temperature coefficient Concentration Fresnel lenses |
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