| IDT6116单粒子敏感性评估试验技术研究 |
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| 引用本文： | 薛玉雄,曹洲,杨世宇,田恺,郭刚,刘建成.IDT6116单粒子敏感性评估试验技术研究[J].原子能科学技术,2008,42(1):22-27. |
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| 作者姓名： | 薛玉雄 曹洲 杨世宇 田恺 郭刚 刘建成 |
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| 作者单位： | 1.兰州物理研究所 ;真空低温技术与物理国防科技重点实验室，甘肃 ;兰州 ;730000；2.中国原子能科学研究院 ;核物理研究所，北京 ;102413 |
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| 摘 要： | 为评估IDT6116SRAM单粒子敏感性，采用地面试验方法和地面试验系统，利用脉冲激光、重离子和252Cf源3种不同的地面模拟源，对IDT6116SRAM器件进行单粒子敏感性试验研究，并对3种不同的模拟源的试验结果进行等效性分析比较，同时进行总剂量效应对单粒子效应影响的试验研究。研究结果表明：IDT6116SRAM抗单粒子翻转和锁定的能力较强；接受一定辐照剂量后的试验样品对单粒子翻转更加敏感，且翻转阈值略有降低，翻转截面略有增大。
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| 关 键 词： | IDT6116SRAM 单粒子翻转 单粒子锁定 脉冲激光 重离子 252Cf源 |
| 文章编号： | 1000-6931（2008）01-0022-06 |
| 收稿时间： | 2007-04-18 |
| 修稿时间： | 2007-06-16 |
Study on IDT6116 Single-Event Effect Sensitivity Evaluation Testing Technology |
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| XUE Yu-xiong,CAO Zhou,YANG Shi-yu,TIAN Kai,GUO Gang,LIU Jian-cheng.Study on IDT6116 Single-Event Effect Sensitivity Evaluation Testing Technology[J].Atomic Energy Science and Technology,2008,42(1):22-27. |
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| Authors: | XUE Yu-xiong CAO Zhou YANG Shi-yu TIAN Kai GUO Gang LIU Jian-cheng |
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| Affiliation: | 1.National Laboratory of Vacuum & Cryogenics Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000, China；2.Department of Nuclear Physics, China Institute of Atomic Energy, Beijing 102413, China |
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| Abstract: | Using single-event effect (SEE) sensitivity evaluation test method and test system as well as three kinds of simulation sources (pulsed laser, heavy ion and 252Cf),the SEE sensitivity of IDT6116 SRAM was experimentally researched. A comparison of testing results’ equivalent for three kinds of simulation sources was performed. In addition, the influence of total dose effects on SEE was also researched. It is seem that occurred single-event upset probability is very little and the resistence to SEE is better for IDT6116 SRAM. |
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| Keywords: | IDT6116 SRAM single-event upset single-event latch-up pulsed laser heavy ion ^252Cf source |
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