| 双向负阻器件的数值模拟 |
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| 引用本文： | 李建军 李风银. 双向负阻器件的数值模拟[J]. 电子学报, 1996, 24(2): 66-69 |
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| 作者姓名： | 李建军 李风银 |
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| 作者单位： | 大连理工大学半导体研究室，辽宁朝阳无线电元件厂 |
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| 摘 要： | 本文通过对双向负阻器件进行数值模拟，分析了其产生负阻的内部图象，模拟结果表明，高阻集电区厚度的减小或衬底杂质浓度的增加使负阻曲线的摆幅增大，而基区掺杂浓度的提高将使负阻曲线的峰值减小。
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| 关 键 词： | 负阻器件 数值模拟 半导体器件 |
Numerical Analysis of Bidirectional Negative Resistance Device |
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| Li Jianjun,Wei Xiwen,Wang Meitian. Numerical Analysis of Bidirectional Negative Resistance Device[J]. Acta Electronica Sinica, 1996, 24(2): 66-69 |
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| Authors: | Li Jianjun Wei Xiwen Wang Meitian |
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| Abstract: | Through numerical simulation of bidirectional negative resistance device(BNRD),the internal picture of BNRD to produce negative resistance has been analyzed.The results show that:1.The amplitude of the negative resistance curve becomes large as the thickness of the high resistance collector region decreases or the dopant concentration of substrate increases.2.The peak of the negative resistance curve decreases as the dopant concentration of base region increases. |
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| Keywords: | Negative resistance device Numerical simulation |
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