Studying natural oxide on the surface of n-Si(111), n-Si(100), and p-Si(111) single crystal wafers by X-ray reflection spectroscopy |
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| Authors: | Filatova E. O. Sokolov A. A. Taracheva E. Yu. Bagrov I. V. |
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| Affiliation: | (1) Department of Electrical Engineering and Computer Science, Case Western Reserve University, 719 Glennan Building, 44106 Cleveland, OH, USA;(2) Department of Electrical Engineering and Computer Science, Case Western Reserve University, 188 Bingham Building, 44106 Cleveland, OH, USA |
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| Abstract: | The state of the surface of standard phosphorus-doped n-Si(111) and n-Si(100) (KEF grade) and boron-doped p-Si(111) (KDB grade) single-crystal wafers treated in a 50% HF–70% HNO3 (1: 3, v/v) polishing solution has been studied using soft X-ray reflection spectroscopy. The fine structure of the reflection spectra in the region of the Si L 2,3 ionization threshold has been analyzed. The dependence of the natural oxide thickness on the orientation of a silicon single crystal surface is established. |
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