| 判断金属/薄层半导体欧姆接触质量的一个新方法 |
| |
| 引用本文： | 华文玉,陈存礼. 判断金属/薄层半导体欧姆接触质量的一个新方法[J]. 电子学报, 1999, 27(8): 126-127 |
| |
| 作者姓名： | 华文玉 陈存礼 |
| |
| 作者单位： | 1. 南京理工大学应用物理系,南京,210094
2. 南京大学物理系,南京,210093 |
| |
| 摘 要： | 提出了一个判断金属／薄层半导体欧姆接触质量的新方法－－环内圆形传输线模型外的支，样品制备简单，无需台面绝缘，测试局域在很小的圆环内无需考虑圆环外的任何边界影响，由于结构的对称性，消除了侧向电流聚集效应，通过测试值的直线拟合消除了部分偶然误差，提高了精度。
|
| 关 键 词： | 金属/半导体接触 欧姆接触 接触电阻率 圆形传输线模型 |
A New Method for Judging Ohimc Contact Quality of Metal/Thin Semiconductor Layer |
| |
| Hua Wenyu,Chen Cunli. A New Method for Judging Ohimc Contact Quality of Metal/Thin Semiconductor Layer[J]. Acta Electronica Sinica, 1999, 27(8): 126-127 |
| |
| Authors: | Hua Wenyu Chen Cunli |
| |
| Abstract: | A new method for judging ohmic contact quality of metal/thin semiconductor layer,circular transmission line model extrapolation method in the ring,is developed.The mesa isolation is omitted,thus simplifying sample preparation.Because all the measurements are located in the ring,there is no need to consider the effects of any boundary out side the ring.Lateral current crowding effect are completely eliminated because of the symmetrical construction of the disc and concentric ring.The straight line is fitted by measurement values,so a part of accidental error can be eliminated,and the accuracy is improved. |
| |
| Keywords: | Metal/semiconductor contact Ohmic contact Specific contact resistance Circular transmission line model |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
