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Schottky diode characteristics of Ti on strained-Si |
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| Authors: | S Chattopadhyay LK Bera K Maharatna S Chakrabarti S Dhar SK Ray CK Maiti |
| Affiliation: | 1 Department of Electronics & ECE, IIT, Kharagpur 721302, India 2 Department of Electronic Science, University of Calcutta, 92 A P C Road, Calcutta 700009, India 3 Department of Physics, IIT, Kharagpur 721302, India |
| Abstract: | The Schottky barrier height and ideality factor of Ti on p-type strained-Si (grown on a graded relaxed Si0.82Ge0.18 buffer layer) were investigated in the temperature range 200–300 K using the current-voltage (I-V) characteristics and were found to be temperature dependent. While the ideality factor decreases with an increase in temperature, the barrier height increases. |
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